PHN1013 Datasheet - NXP

N-channel enhancement mode MOS transistor

PHN1013 General Description

source source source gate drain drain drain drain 1 Top view 4 MAM358 PHN1013 DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. handbook, halfpage 8 5 d g s Fig.1 Simplified outline and symbol.

PHN1013 Datasheet (60.53 KB)

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PHN1013

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NXP ↗

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60.53 KB

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N-channel enhancement mode mos transistor.
DISCRETE SEMICONDUCTORS DATA SHEET PHN1013 N-channel enhancement mode MOS transistor Objective speciﬁcation File under Discrete Semiconductors, SC13.

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PHN1013 N-channel enhancement mode MOS transistor NXP

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PHN1013 General Description

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