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PHN210T Datasheet Dual N-channel TrenchMOS intermediate level FET

Manufacturer: NXP Semiconductors

General Description

Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

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Overview

PHN210T Dual N-channel TrenchMOS intermediate level FET Rev.

02 — 15 December 2010 Product data sheet 1.

Product profile 1.

Key Features

  • Suitable for high frequency.