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PHN205 - Dual N-channel enhancement mode MOS transistor

General Description

Two N-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Key Features

  • High-speed switching.
  • No secondary breakdown.
  • Very low on-state resistance.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PHN205 Dual N-channel enhancement mode MOS transistor Product specification Supersedes data of 1997 Jun 18 File under Discrete Semiconductors, SC13b 1997 Oct 22 Philips Semiconductors Product specification Dual N-channel enhancement mode MOS transistor FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification. DESCRIPTION Two N-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.