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PHN210T - Dual N-channel TrenchMOS intermediate level FET

General Description

Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

  • Suitable for high frequency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHN210T Dual N-channel TrenchMOS intermediate level FET Rev. 02 — 15 December 2010 Product data sheet 1. Product profile 1.1 General description Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Suitable for high frequency applications due to fast switching characteristics  Suitable for logic level gate drive sources  Suitable for low gate drive sources 1.3 Applications  DC-to-DC converters  Logic level translators  Motor and relay drivers 1.4 Quick reference data Table 1.