PHN210T Description
Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only.
PHN210T Key Features
- Suitable for high frequency
PHN210T Applications
- Suitable for high frequency applications due to fast switching characteristics
- Suitable for logic level gate drive sources
- Suitable for low gate drive sources
- DC-to-DC converters