Combination of a NPN transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT96-1 (SO8/MS-012) small plastic package.
PNP complement: PMEM4030PS.
Key Features
s s s s s s 1 W total power dissipation High current capability up to 2 A Reduces Printed-Circuit Board (PCB) area required Reduces pick and place costs Small plastic SMD package Transistor x Low collector-emitter saturation voltage s Diode x High-speed switching x Low forward voltage x Guard ring protected
1.3.
Full PDF Text Transcription for PMEM4030NS (Reference)
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PMEM4030NS. For precise diagrams, and layout, please refer to the original PDF.
PMEM4030NS NPN transistor/Schottky rectifier module Rev. 01 — 25 May 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Combination of a...
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data sheet 1. Product profile 1.1 General description Combination of a NPN transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT96-1 (SO8/MS-012) small plastic package. PNP complement: PMEM4030PS. 1.2 Features s s s s s s 1 W total power dissipation High current capability up to 2 A Reduces Printed-Circuit Board (PCB) area required Reduces pick and place costs Small plastic SMD package Transistor x Low collector-emitter saturation voltage s Diode x High-speed switching x Low forward voltage x Guard ring protected 1.
PMEM4030NS Datasheet
