Datasheet Summary
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P-channel TrenchMOS™ extremely low level FET
Rev. 01
- 28 September 2004 Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features s Low threshold voltage s Low on-state resistance.
1.3 Applications s Low power DC-to-DC converters s Load switching s Battery management s Battery powered portable equipment.
1.4 Quick reference data s VDS ≤
- 20 V s RDSon ≤ 76 mΩ s ID ≤
- 3.9 A s Qgd = 0.65 nC (typ).
2. Pinning information
Table 1: Pin 1 2 3 Discrete pinning Description gate (g) source (s) drain (d) g
Simplified outline
Symbol d
SOT23...
