* s Low threshold voltage s Low on-state resistance. 1.3 Applications s Low power DC-to-DC converters s Load switching s Battery management s Battery powered portable equipment. 1.4 Quick reference data s VDS ≤
* 20 V s RDSon ≤ 76 mΩ s ID ≤
* 3.9 A s Qgd = 0.65 nC (typ). 2. Pinning in
PMV65XP
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P-channel trenchmos extremely low level fet.
www.DataSheet4U.com PMV65XP P-channel TrenchMOS™ extremely low level FET Rev. 01 28 September 2004 Product data sheet 1. Product profile 1..
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