PVB42004X transistor equivalent, npn microwave power transistor.
* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS.
* Intended for use in common base class-B power amplifiers up to 4.2 GHz.
3 2 3
c b e
MAM251
DESCRIPTION NPN silic.
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