PXB16050U Overview
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to the flange. 3 2 Top view 3 handbook, 4 columns PXB16050U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon base class C narrowband amplifier. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
PXB16050U Key Features
- Input and output matching cells allow an easier design of circuits
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
PXB16050U Applications
- SOT439A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di