PXB16050U Datasheet NPN microwave power transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET PXB16050U NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product speciﬁcation NPN microwave power.

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Datasheet Details

Part number	PXB16050U
Manufacturer	NXP Semiconductors
File Size	74.18 KB
Description	NPN microwave power transistor
Download	PXB16050U Download (PDF)

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to the flange.

3 2 Top view 3 handbook, 4 columns PXB16050U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband ampliﬁer.

MODE OF OPERATION Class C (CW) f (GHz) 1.65 VCC (V) 28 PL (W) >45 Gpo (dB) >8.5 ηC (%) >45 Zi/ZL (Ω) see Figs 6 and 7 PINNING - SOT439A PIN 1 2 3 collector emitter base connected to ﬂange DESCRIPTION 1 c b e MAM045 Fig.1 Simplified outline and symbol.

Key Features

Input and output matching cells allow an easier design of circuits.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Interdigitated structure provides high emitter efficiency.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.

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