PZB16035U transistor equivalent, npn microwave power transistor.
* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS.
* Common base class-B power amplifiers under CW conditions in military and professional applications up to 1.6 GHz. .
NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.
Top view 3
handbook, halfpage
PZB16035U
PINNING - SOT443A PIN 1 2 3 collector emitter base connected to flange DE.
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