NPN microwave power transistors
• Suitable for short and medium
pulse applications up to 1 ms pulse
width, 10% duty factor
• Diffused emitter ballasting resistors
• Interdigitated emitter-base
structure provides high emitter
• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
• Multicell geometry improves power
sharing and reduces thermal
• Internal input and output
prematching networks allow an
easier design of circuits.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common-base class C
tp = 500 µs;
RX1214B80W δ = 10%
tp = 150 µs;
RX1214B130Y δ = 5%
PINNING - SOT439A
3 base connected to ﬂange
Common-base class C broadband
pulsed power amplifiers for radar
applications in the 1.2 to 1.4 GHz
band. Also suitable for long pulse,
heavy duty operation within this band.
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with base connected to
handbook, 4 columns
Fig.1 Simplified outline and symbol.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 14