BLD6G21L-50 Datasheet TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

Manufacturer: NXP Semiconductors

Datasheet Details

Part number	BLD6G21L-50
Manufacturer	NXP Semiconductors
File Size	162.90 KB
Description	TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
Datasheet	BLD6G21L-50 Datasheet

The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology.

This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz.

The main and peak device, input splitter and output combiner are integrated in a single package.

BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev.

01 — 28 October 2009 Objective data sheet 1.

Product proﬁle 1.

I Typical TD-SCDMA performance at frequencies from 2010 MHz to 2025 MHz: N Average output power = 8 W N Power gain = 13.5 dB N Efﬁciency = 42 % I Fully optimized integrated Doherty concept: N integrated asymmetrical power splitter at input N integrated power combiner N peak biasing down to 0 V N low junction temperature N high efﬁciency I Integrated ESD protection NXP Semiconductors BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor I I I I I Good pai.

Part Number	Description
BLD6G21LS-50	TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
BLD6G22L-50	W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor
BLD6G22LS-50	W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor