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NXP Semiconductors Electronic Components Datasheet

BSS138PS Datasheet

MOSFET

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BSS138PS
60 V, 320 mA dual N-channel Trench MOSFET
Rev. 1 — 2 November 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
„ Logic-level compatible
„ Very fast switching
„ Trench MOSFET technology
„ AEC-Q101 qualified
1.3 Applications
„ Relay driver
„ High-speed line driver
„ Low-side loadswitch
„ Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per transistor
VDS drain-source voltage
VGS gate-source voltage
ID drain current
RDSon
drain-source on-state
resistance
Conditions
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C;
VGS = 10 V
Tj = 25 °C;
VGS = 10 V;
ID = 300 mA
Min Typ Max Unit
- - 60 V
- - ±20 V
[1] - - 320 mA
[2] -
0.9 1.6 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
[2] Pulse test: tp 300 μs; δ ≤ 0.01.


NXP Semiconductors Electronic Components Datasheet

BSS138PS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
BSS138PS
60 V, 320 mA dual N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Symbol
S1
G1
D2
S2
G2
D1
Description
source1
gate1
drain2
source2
gate2
drain1
Simplified outline Graphic symbol
654
D1 D2
123
S1 G1 S2 G2
msd901
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BSS138PS SC-88
plastic surface-mounted package; 6 leads
4. Marking
Table 4. Marking codes
Type number
BSS138PS
[1] * = placeholder for manufacturing site code
5. Limiting values
Marking code[1]
NZ*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VDS
drain-source voltage
Tamb = 25 °C
-
VGS
gate-source voltage
Tamb = 25 °C
-
ID drain current
VGS = 10 V
[1]
Tamb = 25 °C
-
Tamb = 100 °C
-
IDM peak drain current
Tamb = 25 °C;
single pulse; tp 10 μs
-
Version
SOT363
Max Unit
60 V
±20 V
320 mA
200 mA
1.2 A
BSS138PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
2 of 16


Part Number BSS138PS
Description MOSFET
Maker NXP Semiconductors
PDF Download

BSS138PS Datasheet PDF






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