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BUK6213-30A - N-Channel MOSFET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.

Key Features

  • s Low on-state resistance s 175 °C rated s Q101 compliant s Intermediate level compatible. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUK6213-30A TrenchMOS™ Intermediate level FET M3D300 Rev. 02 — 22 September 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Purpose Automotive (GPA) TrenchMOS™ technology. 1.2 Features s Low on-state resistance s 175 °C rated s Q101 compliant s Intermediate level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 267 mJ s ID ≤ 55 A s RDSon = 10 mΩ (typ) s Ptot ≤ 102 W. 2.