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BUK663R5-55C - N-channel TrenchMOS FET

Datasheet Summary

Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

Features

  • AEC Q101 compliant.
  • Suitable for intermediate level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Datasheet Details

Part number BUK663R5-55C
Manufacturer NXP Semiconductors
File Size 153.99 KB
Description N-channel TrenchMOS FET
Datasheet download datasheet BUK663R5-55C Datasheet
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DataSheet.in BUK663R5-55C N-channel TrenchMOS FET Rev. 01 — 3 August 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V Automotive systems „ ABS/ESP „ Engine management „ HVAC „ Motors, lamps and solenoid control „ Transmission control „ Ultra high performance power switching 1.
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