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BUK6610-75C Datasheet N-channel Trenchmos Fet

Manufacturer: NXP Semiconductors

Overview: BUK6610-75C N-channel TrenchMOS FET Rev. 02 — 14 October 2010 Product data sheet 1. Product profile 1.

General Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

1.2

Key Features

  • AEC Q101 compliant.
  • Suitable for intermediate level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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