• Part: BUK662R4-40C
  • Description: N-channel TrenchMOS FET
  • Manufacturer: NXP Semiconductors
  • Size: 366.40 KB
Download BUK662R4-40C Datasheet PDF
NXP Semiconductors
BUK662R4-40C
BUK662R4-40C is N-channel TrenchMOS FET manufactured by NXP Semiconductors.
N-channel TrenchMOS FET Rev. 2 - 2 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits - AEC Q101 pliant - Suitable for standard and logic level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V and 24 V Automotive systems - Electric and electro-hydraulic power steering - Motors, lamps...