BUK662R7-55C Description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
BUK662R7-55C Key Features
- AEC Q101 pliant
- Suitable for intermediate level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating