BUK662R7-55C
BUK662R7-55C is N-Channel MOSFET manufactured by NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
Rev. 01
- 7 September 2010 Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
- AEC Q101 pliant
- Suitable for intermediate level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V and 24 V Automotive systems
- Electric and electro-hydraulic power steering
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