• Part: BUK663R2-40C
  • Description: N-channel TrenchMOS intermediate level FET
  • Manufacturer: NXP Semiconductors
  • Size: 374.84 KB
Download BUK663R2-40C Datasheet PDF
NXP Semiconductors
BUK663R2-40C
BUK663R2-40C is N-channel TrenchMOS intermediate level FET manufactured by NXP Semiconductors.
N-channel TrenchMOS intermediate level FET Rev. 2 - 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits - AEC Q101 pliant - Suitable for intermediate level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V Automotive systems - Electric and electro-hydraulic power steering - Motors,...