• Part: BUK663R5-55C
  • Description: N-channel TrenchMOS FET
  • Manufacturer: NXP Semiconductors
  • Size: 153.99 KB
Download BUK663R5-55C Datasheet PDF
NXP Semiconductors
BUK663R5-55C
BUK663R5-55C is N-channel TrenchMOS FET manufactured by NXP Semiconductors.
DataSheet.in N-channel TrenchMOS FET Rev. 01 - 3 August 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits - AEC Q101 pliant - Suitable for intermediate level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V and 24 V Automotive systems - ABS/ESP - Engine management - HVAC - Motors, lamps...