* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventio
PBSS304NX Datasheet (252.51 KB)
PBSS304NX
NXP ↗ Semiconductors
252.51 KB
Npn low vcesat breakthrough in small signal (biss) transistor.
PBSS304NX 60 V, 4.7 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General descripti.
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