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PBSS304NX Datasheet NPN low VCEsat Breakthrough In Small Signal (BISS) transistor

Manufacturer: NXP Semiconductors

General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS304PX.

1.2

Overview

PBSS304NX 60 V, 4.7 A NPN low VCEsat (BISS) transistor Rev.

02 — 20 November 2009 Product data sheet 1.

Product profile 1.

Key Features

  • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.