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PBSS304NX Datasheet, NXP Semiconductors

PBSS304NX transistor equivalent, npn low vcesat breakthrough in small signal (biss) transistor.

PBSS304NX Avg. rating / M : 1.0 rating-15

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PBSS304NX Datasheet

Features and benefits


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* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC Hi.

Application


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* High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor contr.

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