Datasheet4U Logo Datasheet4U.com

PMWD15UN - Dual N-channel uTrenchMOS ultra low level FET

Description

Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.

Features

  • s Surface mounting package s Very low threshold voltage s Low profile s Fast switching 1.3.

📥 Download Datasheet

Datasheet Details

Part number PMWD15UN
Manufacturer NXP Semiconductors
File Size 115.21 KB
Description Dual N-channel uTrenchMOS ultra low level FET
Datasheet download datasheet PMWD15UN Datasheet

📁 Similar Datasheet

Other Datasheets by NXP Semiconductors
  • PMWD16UN - Dual N-channel uTrenchMOS ultra low level FET
  • PMWD18UN - Dual N-channel uTrenchMOS ultra low level FET
  • PMWD19UN - Dual uTrenchMOS ultra low level FET
  • PMWD20XN - Dual N-channel uTrenchMOS extremely low level FET
  • PMWD22XN - Dual N-channel uTrenchMOS extremely low level FET
  • PMWD26UN - Dual N-channel uTrenchMOS ultra low level FET
  • PMWD30UN - Dual uTrenchMOS ultra low level FET

Full PDF Text Transcription

Click to expand full text
PMWD15UN Rev. 04 — 5 April 2005 www.DataSheet4U.com Dual N-channel µTrenchMOS™ ultra low level FET Product data sheet 1. Product profile 1.1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounting package s Very low threshold voltage s Low profile s Fast switching 1.3 Applications s Portable appliances s Battery management s PCMCIA cards s Load switching 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 4.2 W s ID ≤ 11.6 A s RDSon ≤ 18.5 mΩ 2.
Published: |