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PMWD19UN - Dual uTrenchMOS ultra low level FET

Description

Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability: PMWD19UN in SOT530-1 (TSSOP8).

Features

  • s Surface mounting package s Very low threshold s Low profile s Fast switching. 1.3.

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Datasheet Details

Part number PMWD19UN
Manufacturer NXP Semiconductors
File Size 256.48 KB
Description Dual uTrenchMOS ultra low level FET
Datasheet download datasheet PMWD19UN Datasheet
Additional preview pages of the PMWD19UN datasheet.

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Full PDF Text Transcription

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PMWD19UN Dual µTrenchMOS™ ultra low level FET Rev. 01 — 20 December 2002 M3D647 www.DataSheet4U.com Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMWD19UN in SOT530-1 (TSSOP8). 1.2 Features s Surface mounting package s Very low threshold s Low profile s Fast switching. 1.3 Applications s Portable appliances s Battery management s PCMCIA cards s Load switching. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.3 W s ID ≤ 5.6 A s RDSon ≤ 23 mΩ. 2.
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