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PSMN8R0-30YL - N-channel MOSFET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in industrial and communications applications.

Key Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for logic level gate drive sources 1.3.

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Datasheet Details

Part number PSMN8R0-30YL
Manufacturer NXP Semiconductors
File Size 398.37 KB
Description N-channel MOSFET
Datasheet download datasheet PSMN8R0-30YL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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w w w . D a t a S h e e t . c o . k r LF PA K PSMN8R0-30YL N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK Rev. 2 — 16 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ Class-D amplifiers „ DC-to-DC converters „ Motor control „ Server power supplies 1.4 Quick reference data Table 1.