Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 and M2 package
100NDD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward 0 current @ TJ = 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms
2
Symbol IF(AV) IF(RMS) IFSM It.
Full PDF Text Transcription for 100NDD (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
100NDD. For precise diagrams, tables, and layout, please refer to the original PDF.
Naina Semiconductor emiconductor Ltd. Diode – Diode Module Features • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures H...
View more extracted text
tion for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 and M2 package 100NDD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward 0 current @ TJ = 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms 2 Symbol IF(AV) IF(RMS) IFSM It 2 Values 100 157 2000 18 Units A A A kA s M1 & M2 PACKAGE 2 Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, juncti
100NDD Datasheet
