Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 & M2 package
100 100NTD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms
2
Symbol IF(AV) IF(RMS) IFSM.
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Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatur...
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sivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 & M2 package 100 100NTD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms 2 Symbol IF(AV) IF(RMS) IFSM It 2 Values 100 220 2000 20 Units A A A kA s 2 M1 & M2 PACKAGE Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance,
100NTD Datasheet
