N02L1618C1A - Ultra-Low Power Asynchronous CMOS SRAM

NanoAmp Solutions

Datasheet Details

Part number	N02L1618C1A
Manufacturer	NanoAmp Solutions
File Size	293.64 KB
Description	Ultra-Low Power Asynchronous CMOS SRAM
Datasheet	N02L1618C1A Datasheet

Overview

NanoAmp Solutions, Inc.

670 North McCarthy Blvd.

Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L1618C1A Advancewww.DataSheet4U.com Information 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview The N02L1618C1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits.

Key Features

Single Wide Power Supply Range 1.65 to 2.2 Volts.
Very low standby current 0.5µA at 1.8V (Typical).
Very low operating current 1.4mA at 1.8V and 1µs (Typical).
Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical).
Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
Low voltage data retention Vcc = 1.2V.
Very fast output enable access time.

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