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N02L163WN1A - Ultra-Low Power Asynchronous CMOS SRAM

Description

Pin Name A0-A16 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Not Connected Power Ground (DOC# 14-02-014 REV L ECN# 01-1000) The specifications of this de

Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts.
  • Very low standby current 2.0µA at 3.0V (Typical).
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical).
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical).
  • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.8V.
  • Very fast output enable access time 3.

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Datasheet Details

Part number N02L163WN1A
Manufacturer NanoAmp Solutions
File Size 294.69 KB
Description Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N02L163WN1A Datasheet

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Full PDF Text Transcription

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NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02L163WN1A www.DataSheet4U.com 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16bit Overview The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently.
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