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N04L1618C2A - 4Mb Ultra-Low Power Asynchronous CMOS SRAM

Description

Pin Name A0-A17 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected (DOC# 14-02-016 REV G ECN# 01-1266) The specifications of t

Features

  • Single Wide Power Supply Range 1.65 to 2.2 Volts.
  • Very low standby current 0.5µA at 1.8V (Typical).
  • Very low operating current 0.7mA at 1.8V and 1µs (Typical).
  • Low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical).
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.2V.
  • Very fast output enable access ti.

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Datasheet Details

Part number N04L1618C2A
Manufacturer NanoAmp Solutions
File Size 277.52 KB
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N04L1618C2A Datasheet

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Full PDF Text Transcription

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04L1618C2A www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit Overview The N04L1618C2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as NanoAmp’s N04L163WC1A, which is processed to operate at higher voltages. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion.
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