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National Semiconductor Electronic Components Datasheet

74HC133 Datasheet

13-Input NAND Gate

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January 1988
MM54HC133 MM74HC133 13-Input NAND Gate
General Description
This NAND gate utilizes advanced silicon-gate CMOS tech-
nology to achieve operating speeds similar to LS-TTL gates
with the low power consumption of standard CMOS inte-
grated circuits All gates have buffered outputs All devices
have high noise immunity and the ability to drive 10 LS-TTL
loads The 54HC 74HC logic family is functionally as well as
pin-out compatible with the standard 54LS 74LS logic fami-
ly All inputs are protected from damage due to static dis-
charge by internal diode clamps to VCC and ground
Features
Y Typical propagation delay 20 ns
Y Wide power supply range 2 – 6V
Y Low quiescent current 20 mA maximum (74HC Series)
Y Low input current 1 mA maximum
Y Fanout of 10 LS-TTL loads
Connection and Logic Diagrams
Dual-In-Line Package
Top View
Order Number MM54HC133 or MM74HC133
TL F 5134 – 1
C1995 National Semiconductor Corporation TL F 5134
TL F 5134 – 2
RRD-B30M105 Printed in U S A


National Semiconductor Electronic Components Datasheet

74HC133 Datasheet

13-Input NAND Gate

No Preview Available !

Absolute Maximum Ratings (Notes 1 2)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage (VCC)
DC Input Voltage (VIN)
DC Output Voltage (VOUT)
Clamp Diode Current (IIK IOK)
DC Output Current per pin (IOUT)
DC VCC or GND Current per pin (ICC)
Storage Temperature Range (TSTG)
Power Dissipation (PD)
(Note 3)
S O Package only
b0 5 to a7 0V
b1 5 to VCCa1 5V
b0 5 to VCCa0 5V
g20 mA
g25 mA
g50 mA
b65 C to a150 C
600 mW
500 mW
Lead Temperature (TL)
(Soldering 10 seconds)
260 C
Operating Conditions
Supply Voltage VCC
DC Input or Output Voltage
VIN VOUT
Operating Temp Range (TA)
MM HC
MM HC
Min
b
b
Input Rise or Fall Times
tr tf VCCe V
VCCe V
VCCe V
Max
VCC
a
a
Units
V
V
C
C
ns
ns
ns
DC Electrical Characteristics (Note 4)
Symbol
Parameter
Conditions
VCC
TAe25 C
Typ
74HC
54HC
TAeb40 to 85 C TAeb55 to 125 C
Guaranteed Limits
Units
VIH Minimum High Level
Input Voltage
V
V
V
V
V
V
VIL Maximum Low Level
Input Voltage
V
V
V
V
V
V
VOH
Minimum High Level VINeVIH or VIL
Output Voltage
lIOUTls mA
V
V
V
V
V
V
VINeVIH or VIL
lIOUTls mA
lIOUTls mA
VOL Maximum Low Level VINeVIH
Output Voltage
lIOUTls mA
V
V
V
V
V
V
V
V
V
V
VINeVIH
lIOUTls mA
lIOUTls mA
V
V
IIN
Maximum Input
VINeVCC or GND
V
Current
g
g
V
V
g mA
ICC
Maximum Quiescent VINeVCC or GND
V
Supply Current
IOUTe mA
mA
Note 1 Absolute Maximum Ratings are those values beyond which damage to the device may occur
Note 2 Unless otherwise specified all voltages are referenced to ground
Note 3 Power Dissipation temperature derating plastic ‘‘N’’ package b12 mW C from 65 C to 85 C ceramic ‘‘J’’ package b12 mW C from 100 C to 125 C
Note 4 For a power supply of 5V g10% the worst case output voltages (VOH and VOL) occur for HC at 4 5V Thus the 4 5V values should be used when designing
with this supply Worst case VIH and VIL occur at VCCe5 5V and 4 5V respectively (The VIH value at 5 5V is 3 85V ) The worst case leakage current (IIN ICC and
IOZ) occur for CMOS at the higher voltage and so the 6 0V values should be used
VIL limits are currently tested at 20% of VCC The above VIL specification (30% of VCC) will be implemented no later than Q1 CY’89
2


Part Number 74HC133
Description 13-Input NAND Gate
Maker National Semiconductor
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74HC133 Datasheet PDF






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