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P5506BVG - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Part number P5506BVG
Manufacturer Niko
File Size 325.32 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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NIKO-SEM www.DataSheet4U.com N-Channel Logic Level Enhancement Mode Field Effect Transistor P5506BVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS 60 RDS(ON) 55m ID 5.5A D 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 1 SYMBOL VDS VGS LIMITS 60 ±20 5.5 4.5 20 2.5 1.3 -55 to 150 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg W °C SYMBOL RθJA TYPICAL MAXIMUM 50 UNITS °C / W Pulse width limited by maximum junction temperature.
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