M36P0R9060N0 - 512 Mbit Flash memory 64 Mbit (Burst) PSRAM

Description

6 Signal descriptions

Features

Partial Array Self-Refresh (PASR).
Deep Power-Down (DPD) mode.
Automatic Temperature-compensated SelfRefresh.
Flash memory.
PSRAM.
Programming time.
4.2µs typical Word program time using www. DataSheet4U. com Buffer Enhanced Factory Program command.
Memory organization.
Multiple Bank Memory Array: 64 Mbit Banks.
Four Extended Flash Array (EFA) Blocks of 64 Kbits Dual operations.
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Numonyx

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Datasheet Details

Part number	M36P0R9060N0
Manufacturer	Numonyx
File Size	470.75 KB
Description	512 Mbit Flash memory 64 Mbit (Burst) PSRAM
Datasheet	M36P0R9060N0 Datasheet
Additional preview pages of the M36P0R9060N0 datasheet.

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Full PDF Text Transcription

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M36P0R9060N0 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package Preliminary Data Feature summary ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 64 Mbit (4Mb x16) PSRAM Supply voltage – VDDF = VCCP = VDDQ = 1.7 to 1.

Published: Nov 14, 2009 |