1N5823 Description
1N5823 ,1N5824 ,1N5825 1N5823 and 1N5825 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry.
1N5823 Key Features
- Extremely Low VF
- Low Power Loss/High Efficiency
- Low Stored Charge, Majority Carrier Conduction
- Shipped in plastic bags, 500 per bag
- Pb-Free Packages are Available
- Case: Epoxy, Molded
- Weight: 1.1 Gram (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal
- Lead Temperature for Soldering Purposes
- Polarity: Cathode indicated by Polarity Band