1N5823 Datasheet, ON Semiconductor

chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverte.

1N5823 ,1N5824 ,1N5825 1N5823 and 1N5825 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal o.