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  ON Semiconductor Electronic Components Datasheet  

2N5684 Datasheet

(2N5684 / 2N5686) High-Current Complementary Silicon Power Transistors

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ON Semiconductort
High−Current Complementary
Silicon Power Transistors
. . . designed for use in highpower amplifier and switching circuit
applications.
High Current Capability
IC Continuous = 50 Amperes.
DC Current Gain
hFE = 1560 @ IC = 25 Adc
Low CollectorEmitter Saturation Voltage
VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
w These devices are available in Pbfree package(s). Specifications herein
apply to both standard and Pbfree devices. Please see our website at
www.onsemi.com for specific Pbfree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
2N5684
2N5686
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorBase Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitterBase Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
VCEO
VCB
VEB
IC
IB
PD
80
80
5.0
50
15
300
1.715
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
65 to + 200
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
Symbol
θJC
Max
0.584
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
(1) Indicates JEDEC Registered Data.
300
PNP
2N5684
NPN
2N5686
50 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 80 VOLTS
300 WATTS
CASE 197A05
TO204AE
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
TEMPERATURE (°C)
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
© Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 11
1
Publication Order Number:
2N5684/D


  ON Semiconductor Electronic Components Datasheet  

2N5684 Datasheet

(2N5684 / 2N5686) High-Current Complementary Silicon Power Transistors

No Preview Available !

2N5684 2N5686
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Sustaining Voltage (Note 2)
(IC = 0.2 Adc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, IB=0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 80 Vdc, IE=0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
DC Current Gain (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 25 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 50 Adc, VCE = 5.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Saturation Voltage (Note 2)
(IC = 25 Adc, IB = 2.5 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 50 Adc, IB = 10 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBaseEmitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBaseEmitter On Voltage (Note 1) (IC = 25 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrentGain Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N5684
2N5686
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmallSignal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data.
Symbol
VCEO(sus)
ICEO
ICEX
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
hfe
Min
80
15
5.0
2.0
15
Max Unit
Vdc
mAdc
1.0
mAdc
2.0
10
mAdc
2.0
5.0 mAdc
60
Vdc
1.0
5.0
2.0 Vdc
2.0 Vdc
2000
1200
MHz
pF
Note 2: Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
VCC −30 V
+2.0 V
0
tr
20 ns
−12 V
10 to 100 μs
DUTY CYCLE 2.0%
RB
RL
TO SCOPE
tr 20 ns
VCC −30 V
+10 V
RL
0
−12 V
tr 20 ns
10 to 100 μs
DUTY CYCLE 2.0%
RB
VBB
+4.0 V
TO SCOPE
tr 20 ns
FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.
Figure 2. Switching Time Test Circuit
1.0
0.7
0.5 tr
0.3
0.2
td
0.1
0.07
0.05
0.03
0.02
TJ = 25°C
IC/IB = 10
VCC = 30 V
2N5684 (PNP)
2N5686 (NPN)
0.01
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMP)
Figure 3. TurnOn Time
30
50
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2


Part Number 2N5684
Description (2N5684 / 2N5686) High-Current Complementary Silicon Power Transistors
Maker ON Semiconductor
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