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2N5684 (PNP), 2N5686 (NPN)
High-Current Complementary Silicon Power Transistors
These packages are designed for use in high-power amplifier and switching circuit applications.
Features
•ăHigh Current Capability - IC Continuous = 50 Amperes •ăDC Current Gain - hFE = 15ā-ā60 @ IC = 25 Adc •ăLow Collector-Emitter Saturation Voltage -
ąVCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
•ăPb-Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C
Symbol VCEO VCB VEB
IC IB PD
Value 80 80 5.0 50 15 300
1.
2N5684 Datasheet
