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  ON Semiconductor Electronic Components Datasheet  

2N5686 Datasheet

NPN Transistor

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2N5684 (PNP), 2N5686 (NPN)
High-Current
Complementary Silicon
Power Transistors
These packages are designed for use in high-power amplifier and
switching circuit applications.
Features
ăHigh Current Capability - IC Continuous = 50 Amperes
ăDC Current Gain - hFE = 15ā-ā60 @ IC = 25 Adc
ăLow Collector-Emitter Saturation Voltage -
ąVCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
ăPb-Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Symbol
VCEO
VCB
VEB
IC
IB
PD
Value
80
80
5.0
50
15
300
1.715
Unit
Vdc
Vdc
Vdc
Adc
Adc
mW
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg -ā65 to +ā200 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
qJC
0.584
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
300
250
200
150
http://onsemi.com
50 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80 VOLTS, 300 WATTS
MARKING
DIAGRAM
TO-204 (TO-3)
CASE 197A
STYLE 1
2N568xG
AYYWW
MEX
2N568x
G
A
YY
WW
MEX
= Device Code
x = 4 or 6
= Pb-Free Package
= Location Code
= Year
= Work Week
= Country of Orgin
ORDERING INFORMATION
Device
2N5684G
2N5686
Package
TO-3
(Pb-Free)
TO-3
Shipping
100 Units/Tray
100 Units/Tray
2N5686G
TO-3
(Pb-Free)
100 Units/Tray
100
50
0
0 20 40 60 80 100 120 140 160 180 200
TEMPERATURE (°C)
Figure 1. Power Derating
*For additional information on our Pb-Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
©Ă Semiconductor Components Industries, LLC, 2007
1
October, 2007 - Rev. 12
Publication Order Number:
2N5684/D


  ON Semiconductor Electronic Components Datasheet  

2N5686 Datasheet

NPN Transistor

No Preview Available !

2N5684 (PNP), 2N5686 (NPN)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector-Emitter Sustaining Voltage (Note 3)
(IC = 0.2 Adc, IB = 0)
VCEO(sus)
80
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
ICEO
-
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
ICEX
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
-
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
-
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
-
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
-
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (Note 3)
hFE
(IC = 25 Adc, VCE = 2.0 Vdc)
15
(IC = 50 Adc, VCE = 5.0 Vdc)
5.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector-Emitter Saturation Voltage (Note 3)
VCE(sat)
(IC = 25 Adc, IB = 2.5 Adc)
-
(IC = 50 Adc, IB = 10 Adc)
-
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base-Emitter Saturation Voltage (Note 2)
(IC = 25 Adc, IB = 2.5 Adc)
VBE(sat)
-
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base-Emitter On Voltage (Note 2)
(IC = 25 Adc, VCE = 2.0 Vdc)
VBE(on)
-
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current-Gain - Bandwidth Product
(IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N5684
Cob
-
2N5686
-
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small-Signal Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
15
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. Indicates JEDEC Registered Data.
Max
Unit
-
Vdc
1.0
mAdc
mAdc
2.0
10
2.0
mAdc
5.0
mAdc
-
60
-
Vdc
1.0
5.0
2.0
Vdc
2.0
Vdc
-
2000
1200
-
MHz
pF
3. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
VCC -ā30 V
+ā2.0 V
0
RB
tr
20Ăns
-12ĂV
10 to 100 μs
DUTY CYCLE 2.0%
RL
TO SCOPE
tr 20 ns
VCC -ā30 V
+10ĂV
RL
0
-12ĂV
tr 20Ăns
10 to 100 μs
DUTY CYCLE 2.0%
RB
VBB
+ā4.0 V
TO SCOPE
tr 20 ns
FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.
Figure 2. Switching Time Test Circuit
1.0
0.7
0.5
tr
0.3
0.2
td
0.1
0.07
0.05
0.03
TJ = 25°C
IC/IB = 10
0.02
VCC = 30 V
2N5684 (PNP)
2N5686 (NPN)
0.01
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn-On Time
http://onsemi.com
2


Part Number 2N5686
Description NPN Transistor
Maker ON Semiconductor
PDF Download

2N5686 Datasheet PDF






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