High-Power NPN Silicon
Transistors
. . . designed for use in industrial–military power amplifier and
switching circuit applications.
• High Collector Emitter Sustaining —
VCEO(sus) = 100 Vdc (Min) — 2N6274
= 120 Vdc (Min) — 2N6275
= 150 Vdc (Min) — 2N6277
• High DC Current Gain —
hFE = 30–120 @ IC = 20 Adc
= 10 (Min) @ IC = 50 Adc
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc
• Fast Switching Times @ IC 20 Adc
tr = 0.35 ms (Max)
ts = 0.8 ms (Max)
tf = 0.25 ms (Max)
• Complement to 2N6377–79
2N6274
2N6275
2N6277*
*ON Semiconductor Preferred Device
50 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
250 WATTS
CASE 197A–05
TO–204AE
(TO–3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS(1)
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTIC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
VCB
VCEO
VEB
IC
IB
PD
TJ, Tstg
2N6274 2N6275 2N6277
120 140 180
100 120 150
6.0
50
100
20
250
1.43
–65 to +200
Symbol
θJC
Max
0.7
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
(1) Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 8
1
Publication Order Number:
2N6274/D
