2N7002 Datasheet - ON Semiconductor

N-channel FET

2N7002 Features

* High Density Cell Design for Low RDS(on)

* Voltage Controlled Small Signal Switch

* Rugged and Reliable

* High Saturation Current Capability

* ESD Protection Level: HBM > 100 V, CDM > 2 kV

* This Device is Pb

* Free and Halogen Free DATA SHEET www.onsemi.com D G S 1

2N7002 General Description

These N *channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on *state resistance while providing rugged, reliable, and fast switching performance. These products ar.

2N7002 Datasheet (244.78 KB)