2N7002 Datasheet | Specifications & PDF Download

2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230

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www.vishay.com 2N7002K Vishay Siliconix N-Channel 60 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: 7K 1 G Top View PRODUCT SUMMARY VDS (V) RD

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N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMO

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kw ME2N7002DKW-G Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected GENERAL DESCRIPTION The ME2N7002DKW-G is the Dual N-Channel logic enhan

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2N7002 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General descr

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1/D TMOS FET Transistor N–Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motoro

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2N7002T N-channel TrenchMOS FET Rev. 01 — 17 November 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode

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2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhanceme

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2N7002E N-channel TrenchMOS™ FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Fiel

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N-Channel MOSFET – ESD Protected GENERAL DESCRIPTION The ME2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced

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NP2N7002 20V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2N7002 has been designed to minimize the on-state resistance (RD

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XP2N7002KU Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D BVDSS RDS(ON) ▼ Surf

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Dual N-Channel MOSFET P b Lead(Pb)-Free Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ES

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Dual N-Channel MOSFET DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ME2N7002D1KW-G(Green) • Low On-Resistance • Fast Switching Speed • Low

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N-Channel 60V (D-S) MOSFET, ESD Protection PGrEoNteEcRtAeLd DESCRIPTION The ME2N70023D2-G is the N-Channel logic enhancement mode power field effect t

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MOSFET 2N7002K-HF N-Channel RoHS Device Halogen Free Features -Small Signal MOSFET. -ESD protected: 1000V. Marking: 702 Equivalent Circuit D G : Gate

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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Fi

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SC–74 L2N7002DMT1G S-L2N7002DMT1G • We declare that the material of pr

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Main Product Characteristics: VDSS RDS(on) 60V 2Ω(max.) ID 0.3A SOT-23 Features and Benefits:  Advanced MOSFET process technology  Special des

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