2N7002 Datasheet | Pinout, Features, Price Comparison & PDF

2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230

Dual N-Channel MOSFET P b Lead(Pb)-Free Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ES

DATA SHEET www.onsemi.com MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA 2N7002L, 2V7002L V(BR)DSS 60 V RDS(on) MAX 7.5 W @ 10 V, 500 mA N−C

N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMO

Main Product Characteristics: VDSS 60V RDS(on) 2Ω (typ.) ID 0.27A SOT-23 Features and Benefits:  Advanced trench MOSFET process technology  S

Description JMTL2N7002K JMT N-channel MOSFET Features Application  VDS=60V, ID=0.3A  Battery Operated Systems RDS(ON) <2.8Ω @ VGS = 10V  Di

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1/D TMOS FET Transistor N–Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motoro

2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancem

2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual

2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capaci

N-Channel 60V (D-S) MOSFET, ESD Protection PGrEoNteEcRtAeLd DESCRIPTION The ME2N70023D2-G is the N-Channel logic enhancement mode power field effect t

2N7002TB 60V N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@50mA=7.5Ω • Advanced Trench Process Te

kw ME2N7002DKW-G Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected GENERAL DESCRIPTION The ME2N7002DKW-G is the Dual N-Channel logic enhan

DATA SHEET www.onsemi.com MOSFET – Small Signal, N-Channel, Single 60 V, 340 mA, SC−70 2N7002W, 2V7002W Features  ESD Protected  Low RDS(on)  S

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 • • ESD Protected:1000V • S- Prefix for Automotive and Other Appl

Product Summary V(BR)DSS 60V RDS(ON) max 7.5Ω @ VGS = 5V ID max TA = +25°C 210mA 2N7002H N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits 

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage co

2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 3Ω @ VGS = 10V ID Max TA = +25°C 300mA Features and Benefits • Lo

www.vishay.com 2N7002K Vishay Siliconix N-Channel 60 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: 7K 1 G Top View PRODUCT SUMMARY VDS (V) RD

www.DataSheet4U.com 2N7002DCSM MECHANICAL DATA Dimensions in mm (inches) DUAL N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 1.40 ± 0.15 (0.055 ± 0.006)