2N7002K RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VG

2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230

2N7002KCDWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) ＜2.

2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) 2N7000 2N

2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Fi

UNISONIC TECHNOLOGIES CO., LTD 2N7002K 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UTC 2N7002K uses advanced technology to provide

2N7002BK 60 V, 350 mA N-channel Trench MOSFET 17 October 2024 Product data sheet 1. General description N-channel enhancement mode Field-Effect Tran

OptiMOS™ Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according t

2N7002KCWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) ＜2.5

Product Summary V(BR)DSS 60V RDS(ON) max 6Ω @ VGS = 5V ID max TA = +25°C 200mA Description and Applications This MOSFET is designed to meet the st

P2N7002KW-AU 60V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 60 V Current 250mA SOT-323 Features  RDS(ON), VGS@10V, ID@500mA<3Ω

WWW.DCY-CHINA.NET Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 ●FEATURES 1)We declare that the material of product compliant with RoHS

Dual N-Channel MOSFET P b Lead(Pb)-Free Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ES

2N7002DW — N-Channel Enhancement Mode Field Effect Transistor January 2015 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • D

2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capaci

DATA SHEET www.onsemi.com MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA 2N7002L, 2V7002L V(BR)DSS 60 V RDS(on) MAX 7.5 W @ 10 V, 500 mA N−C

Main Product Characteristics: VDSS 60V RDS(on) 2Ω (typ.) ID 0.27A SOT-23 Features and Benefits:  Advanced trench MOSFET process technology  S

2N7002KC RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at V

N-Channel Small Signal MOSFET FEATURES Lower RDS(on) Improved Inductive Ruggedness Fast Switching Times Lower Input Capacitance Extended Saf