2N7002KCDWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) ＜2.

2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230

2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual

2N7002BK 60 V, 350 mA N-channel Trench MOSFET 17 October 2024 Product data sheet 1. General description N-channel enhancement mode Field-Effect Tran

Dual N-Channel MOSFET P b Lead(Pb)-Free Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ES

Elektronische Bauelemente S2N7002RDW-C 320mA, 60V Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen

Product Summary V(BR)DSS 60V RDS(ON) max 6Ω @ VGS = 5V ID max TA = +25°C 200mA Description and Applications This MOSFET is designed to meet the st

2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capaci

2N7002DW — N-Channel Enhancement Mode Field Effect Transistor January 2015 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • D

UNISONIC TECHNOLOGIES CO., LTD 2N7002K 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UTC 2N7002K uses advanced technology to provide

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 • • ESD Protected:1000V • S- Prefix for Automotive and Other Appl

2N7002BKW 60 V, 310 mA N-channel Trench MOSFET 17 October 2024 Product data sheet 1. General description N-channel enhancement mode Field-Effect Tra

Main Product Characteristics: VDSS 60V RDS(on) 2Ω (typ.) ID 0.27A SOT-23 Features and Benefits:  Advanced trench MOSFET process technology  S

2N7002KCW RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at

WWW.DCY-CHINA.NET Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 ●FEATURES 1)We declare that the material of product compliant with RoHS

2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Tr

OptiMOS™ Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according t

2N7002H 60 V, N-channel Trench MOSFET 1 December 2021 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (

2N7002TQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS 60V RDS(ON) 7.5Ω @ VGS = 5V ID TA = +25°C 115mA Description and Applic

2N7002KCE RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at