2N7002 Datasheet | Specifications & PDF Download

2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230

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kw ME2N7002DKW-G Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected GENERAL DESCRIPTION The ME2N7002DKW-G is the Dual N-Channel logic enhan

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Description JMTL2N7002K JMT N-channel MOSFET Features Application  VDS=60V, ID=0.3A  Battery Operated Systems RDS(ON) <2.8Ω @ VGS = 10V  Di

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2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capaci

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N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMO

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SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage co

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DATA SHEET www.onsemi.com MOSFET – Small Signal, N-Channel, Single 60 V, 340 mA, SC−70 2N7002W, 2V7002W Features  ESD Protected  Low RDS(on)  S

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2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual

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DATA SHEET www.onsemi.com MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA 2N7002L, 2V7002L V(BR)DSS 60 V RDS(on) MAX 7.5 W @ 10 V, 500 mA N−C

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Dual N-Channel MOSFET P b Lead(Pb)-Free Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ES

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Not Recommended for New 2N7002V/VA Design, Use 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET

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N-Channel Small Signal MOSFET FEATURES Lower RDS(on) Improved Inductive Ruggedness Fast Switching Times Lower Input Capacitance Extended Saf

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2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancem

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Product Summary V(BR)DSS 60V RDS(ON) max 7.5Ω @ VGS = 5V ID max TA = +25°C 210mA 2N7002H N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits 

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2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected

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FEATURES ● VDS=60V, ID=0.3A RDS(ON) < 3.5Ω @ VGS=5V RDS(ON) < 3Ω @ VGS=10V ESD Rating: 1000V HBM ● High Power and Current Handling Capability ● Lead F

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2N7002DWS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 4.0Ω @ VGS = 10V 4.1Ω @ VGS = 5V 5.0Ω @ VGS = 4V ID Max TA

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2N7002KCDWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) ＜2.

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XP2N7002KU Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D BVDSS RDS(ON) ▼ Surf

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NIKO-SEM N-Channel Logic Level Enhancement PZ2N7002Y Mode Field Effect Transistor SOT-323 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS

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