2N7000 / 2N7002 / NDS7002A — N-Channel Enhanceme.
2N7002 - N-Channel Enhancement Mode Power MOSFET
2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230.2N7002KDW - Dual N-Channel MOSFET
Dual N-Channel MOSFET P b Lead(Pb)-Free Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ES.2N7002KCE - N-Channel Enhancement Mode Field Effect Transistor
2N7002KCE RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at .2N7002T - N-channel TrenchMOS FET
2N7002T N-channel TrenchMOS FET Rev. 01 — 17 November 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode .2N7002KCWQ - N-Channel Enhancement Mode Field Effect Transistor
2N7002KCWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) <2.5.2N7002KCW - N-Channel Enhancement Mode Field Effect Transistor
2N7002KCW RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at .2N7002KDW - N-Channel Enhancement Mode Field Effect Transistor
2N7002KDW RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V) <2.5o.2N7002HS - dual N-channel Trench MOSFET
2N7002HS 60 V, dual N-channel Trench MOSFET 15 December 2021 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect .2N7002KV - Dual N-Channel MOSFET
1.9 Features +LJK'HQVLW\&HOO'HVLJQIRU/RZ5'621 9ROWDJH&RQWUROOHG6PDOO6LJQDO6ZLWFK (SR[\0HHWV8/9)ODPPDELOLW\5DWLQJ 0.ME2N7002DKW-G - Dual N-Channel MOSFET
kw ME2N7002DKW-G Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected GENERAL DESCRIPTION The ME2N7002DKW-G is the Dual N-Channel logic enhan.ME2N7002E - N-Channel MOSFET
N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMO.2N7002KB - MOSFET
Main Product Characteristics: VDSS RDS(on) 60V 2Ω(max.) ID 0.3A SOT-23 Features and Benefits: Advanced MOSFET process technology Special des.2N7002KCDWQ - N-Channel Enhancement Mode Field Effect Transistor
2N7002KCDWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) <2..2N7002LT1 - TMOS FET Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1/D TMOS FET Transistor N–Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motoro.2N7002K - N-channel MOSFET
SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switc.2N7002BKS - dual N-channel MOSFET
2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual.2N7002 - N-channel FET
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Fi.2N7002KW - N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002KW V(BR)DSS 9 N-Channel MOSFET RDS(on)MAX ȍ#9 .2N7002K - N-Channel Enhancement Mode Power MOSFET
2N7002K N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230.S2N7002DW - Dual N-Channel MOSFET
Elektronische Bauelemente S2N7002DW 115mA, 60V Dual N-Channel MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free MECHANIC.