2N7002 Datasheet | Specifications & PDF Download

2N7002DW Dual N-Channel MOSFET 3 2 1 6 5 4 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low T

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DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1

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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Fi

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET L2N7002KLT1G 380 mAmps, 60 Volts N–Channel SOT–23 S-L2N7002KLT1G ●FEATURES 1)ESD Protected 2)Low RD

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 • • ESD Protected:1000V • S- Prefix for Automotive and Other Appl

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N-Channel Enhancement Mode Field Effect Transistor 2N7002T Features • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast S

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Description JMTL2N7002KS JMT N-channel MOSFET Features Application  VDS=60V, ID=0.25A  Battery Operated Systems RDS(ON) <2.2Ω @ VGS = 10V 

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Description AP2N7002AL 60V N-Channel Enhancement Mode MOSFET The AP2N7002AL uses advanced trench technology to provide excellent RDS(ON), low gate c

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BYD Microelectronics Co., Ltd. BF92N7002 60V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimiz

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NIKO-SEM N-Channel Logic Level Enhancement PZ2N7002Y Mode Field Effect Transistor SOT-323 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS

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2N7002B N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 2000V (HBM)  Low On-Resistance: RDS(on) < 3Ω @ VG

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200605 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H2N7002SN N-Channel MOSF

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HI-SINCERITY MICROELECTRONICS CORP. H2N7002 N-CHANNEL TRANSISTOR Spec. No. : MOS200503 Issued Date : 2005.04.01 Revised Date : 2009.10.09 Page No. :

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Main Product Characteristics: VDSS RDS(on) 60V 3Ω(max.) ID 0.3A SOT-23 Features and Benefits:  Advanced MOSFET process technology  Special des

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Main Product Characteristics: VDSS RDS(on) 60V 2Ω(max.) ID 0.3A SOT-23 Features and Benefits:  Advanced MOSFET process technology  Special des

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2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capaci

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2N7002CSM MECHANICAL DATA Dimensions in mm (inches) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR FEATURES

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Product Summary BVDSS 60V RDS(ON) Max 7.5Ω @ VGS = 5V ID Max TA = +25°C 0.23A Description and Applications This MOSFET has been designed to minimi

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DATA SHEET www.onsemi.com MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA 2N7002L, 2V7002L V(BR)DSS 60 V RDS(on) MAX 7.5 W @ 10 V, 500 mA N−C

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