2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230

2N7002KCDWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) ＜2.

Dual N-Channel MOSFET P b Lead(Pb)-Free Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ES

2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capaci

Elektronische Bauelemente S2N7002RDW-C 320mA, 60V Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen

DATA SHEET www.onsemi.com MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA 2N7002L, 2V7002L V(BR)DSS 60 V RDS(on) MAX 7.5 W @ 10 V, 500 mA N−C

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 • • ESD Protected:1000V • S- Prefix for Automotive and Other Appl

Main Product Characteristics: VDSS 60V RDS(on) 2Ω (typ.) ID 0.27A SOT-23 Features and Benefits:  Advanced trench MOSFET process technology  S

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 30 Volts N–Channel SC70 • We declare that the material of product are Halogen Free and compliance with

2N7002KCW RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage co

L2N7002DW1T1G S-L2N7002DW1T1G Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product complianc

UNISONIC TECHNOLOGIES CO., LTD 2N7002K 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UTC 2N7002K uses advanced technology to provide

2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual

2N7002B N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 2000V (HBM)  Low On-Resistance: RDS(on) < 3Ω @ VG

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1/D TMOS FET Transistor N–Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motoro

L2N7002KDW1T1G S-L2N7002KDW1T1G Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product complia

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET L2N7002KLT1G 380 mAmps, 60 Volts N–Channel SOT–23 S-L2N7002KLT1G ●FEATURES 1)ESD Protected 2)Low RD

kw ME2N7002DKW-G Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected GENERAL DESCRIPTION The ME2N7002DKW-G is the Dual N-Channel logic enhan

N-Channel 60V (D-S) MOSFET, ESD Protection PGrEoNteEcRtAeLd DESCRIPTION The ME2N70023D2-G is the N-Channel logic enhancement mode power field effect t