ME2N7002E Description
The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.2A.
ME2N7002E Key Features
- 60V / 0.50A , RDS(ON)= 5.0Ω@VGS=10V
- 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum
- SOT-23 package design