ME2N7002E
Overview
The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
- 60V / 0.50A , RDS(ON)= 5.0Ω@VGS=10V
- 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- SOT-23 package design
