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ME2N7002E Datasheet N-channel MOSFET

Manufacturer: Matsuki

Overview: N-Channel MOSFET GENERAL.

Datasheet Details

Part number ME2N7002E
Manufacturer Matsuki
File Size 601.52 KB
Description N-Channel MOSFET
Datasheet ME2N7002E-Matsuki.pdf

General Description

The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.2A.

Key Features

  • 60V / 0.50A , RDS(ON)= 5.0Ω@VGS=10V.
  • 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design.

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