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ME2N7002E - N-Channel MOSFET

General Description

The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Key Features

  • 60V / 0.50A , RDS(ON)= 5.0Ω@VGS=10V.
  • 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design.

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Datasheet Details

Part number ME2N7002E
Manufacturer Matsuki
File Size 601.52 KB
Description N-Channel MOSFET
Datasheet download datasheet ME2N7002E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION (SOT-23) Top View ME2N7002E FEATURES ● 60V / 0.50A , RDS(ON)= 5.0Ω@VGS=10V ● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.