| Part Number | ME2N7002E Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
ME2N7002E-VB
ME2N7002E-VB Datasheet
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60
2.8 at VGS = 10 V
ID (mA) 250
SOT-23 G1
3D S2
Top View D
G
S N-Channel MO.
* Halogen-free According to IEC 61249-2-21 Definition * Low Threshold: 2 V (typ.) * Low Input Capacitance: 25 pF * Fast Switching Speed: 25 ns * Low Input and Output Leakage * Trench Power MOSFET * Compliant to RoHS Directive 2002/95/EC BENEFITS * Low Offset Voltage * Low-Voltage Operation * Easily . |
ME2N7002E Datasheet and Specifications PDF
The ME2N7002E is a N-Channel 60V MOSFET.
| Part Number | ME2N7002E Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Matsuki |
| Overview |
The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while p.
* 60V / 0.50A , RDS(ON)= 5.0Ω@VGS=10V * 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V * Super high density cell design for extremely low RDS (ON) * Exceptional on-resistance and maximum DC current capability * SOT-23 package design APPLICATIONS * High density cell design for low RDS(ON) * Voltage controlled . |