Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor
Features
- Low On- Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Ultra- Small Surface Mount Package
- These Devices are Pb- Free and are RoHS pliant
- ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V as per JESD22...
