55GN01FA - RF Transistor

onsemi

Key Features

High Cut.
off Frequency: fT = 5.5 GHz Typ.
High Gain: ⎪S21e⎪2 = 11 dB Typ (f = 1 GHz) ⎪S21e⎪2 = 19 dB Typ (f = 400 MHz).
Ultrasmall Package Permitting Applied Sets to be Small and Slim.
This Device is Pb.
Free and Halide Free Specification.

55GN01FA rf transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	55GN01FA
Manufacturer	onsemi
File Size	185.52 KB
Description	RF Transistor
Datasheet	55GN01FA Datasheet

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DATA SHEET www.onsemi.com RF Transistor 10 V, 70 mA, fT = 5.5 GHz, NPN Single SSFP 55GN01FA Features • High Cut−off Frequency: fT = 5.5 GHz Typ • High Gain: ⎪S21e⎪2 = 11 dB Typ (f = 1 GHz) ⎪S21e⎪2 = 19 dB Typ (f = 400 MHz) • Ultrasmall Package Permitting Applied Sets to be Small and Slim • This Device is Pb−Free and Halide Free Specification ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Tj Collector−to−Base Voltage Collector−to−Emitter Voltage Emitter−to−Base Voltage Collector Current Collector Dissipation Junction Temperature 20 V 10 V 3 V 70 mA 250 mW 150 °C Tstg Storage Temperature −55 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device.