• Part: AFGHL40T65RQDN
  • Description: IGBT
  • Manufacturer: onsemi
  • Size: 328.70 KB
AFGHL40T65RQDN Datasheet (PDF) Download
onsemi
AFGHL40T65RQDN

Key Features

  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co−efficient for Easy Parallel Operation
  • High Current Capability
  • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 40 A
  • 100% of the Parts Tested for ILM (Note 2)
  • High Input Impedance
  • Fast Switching
  • Tightened Parameter Distribution
  • This Device is Pb−Free and RoHS pliant

Applications

  • E−pressor for HEV/EV, PTC heater for HEV/EV