Datasheet4U Logo Datasheet4U.com

AFGHL40T65RQDN - IGBT

Datasheet Summary

Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operation.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @ IC = 40 A.
  • 100% of the Parts Tested for ILM (Note 2).
  • High Input Impedance.
  • Fast Switching.
  • Tightened Parameter Distribution.
  • This Device is Pb.
  • Free and RoHS Compliant Typical.

📥 Download Datasheet

Datasheet preview – AFGHL40T65RQDN

📁 Similar Datasheet

Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
IGBT for Automotive Application 650 V, 40 A AFGHL40T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.
Published: |