AFGHL40T65RQDN
AFGHL40T65RQDN is IGBT manufactured by onsemi.
Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co- efficient for Easy Parallel Operation
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 40 A
- 100% of the Parts Tested for ILM (Note 2)
- High Input Impedance
- Fast Switching
- Tightened Parameter Distribution
- This Device is Pb- Free and Ro HS pliant
Typical Applications
- E- pressor for HEV/EV, PTC heater for HEV/EV
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector- to- Emitter Voltage
Gate- to- Emitter Voltage Transient Gate- to- Emitter Voltage
VCES
VGES
±20
±30
Collector Current (Note 1) @ TC = 25°C @ TC = 100°C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
Diode Forward Current (Note 1) @ TC = 25°C @ TC = 100°C
Pulsed Diode Maximum Forward Current
Non- Repetitive Forward Surge Current (Half- Sine Pulse, tp = 8.3 ms, TC = 25°C) (Half- Sine Pulse, tp = 8.3 ms, TC = 150°C)
Short Circuit Withstand Time VGE = 15 V, VCC = 400 V, TC = 150°C
150 t SC...
