AFGHL50T65SQDC - Hybrid IGBT

ON Semiconductor

AFGHL50T65SQDC Description

Hybrid IGBT, 50 A, 650 V AFGHL50T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technol.

AFGHL50T65SQDC Features

* AEC
* Q101 Qualified
* Maximum Junction Temperature : TJ = 175C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @IC = 50 A
* Fast Switching
* Tighten Parameter Dis

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Datasheet Details

Part number: AFGHL50T65SQDC
Manufacturer: ON Semiconductor ↗
File Size: 317.99 KB
Datasheet: AFGHL50T65SQDC-ONSemiconductor.pdf
Description: Hybrid IGBT

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