AFGHL50T65SQ
AFGHL50T65SQ is IGBT manufactured by onsemi.
Field Stop Trench IGBT
50 A, 650 V
Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application. It is a stand- alone IGBT.
Features
- AEC- Q101 Qualified
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co- efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A
- 100% of the Parts are Tested for ILM (Note 2)
- Fast Switching
- Tight Parameter Distribution
- Ro HS pliant
Typical Applications
- Automotive HEV- EV Onboard Chargers
- Automotive HEV- EV DC- DC Converters
- Totem Pole Bridgeless PFC
- PTC
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector- to- Emitter Voltage Gate- to- Emitter Voltage Transient Gate- to- Emitter Voltage
VCES VGES
650 ±20 ±30
Collector Current (Note 1)
@ TC = 25°C @ TC = 100°C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
Maximum Power Dissipation @ TC = 25°C @ TC = 100°C
Operating Junction / Storage Temperature...
