Datasheet4U Logo Datasheet4U.com

AFGHL50T65SQD - IGBT

Key Features

  • AEC.
  • Q101 Qualified.
  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @ IC = 50 A.
  • 100% of the Parts are Tested for ILM (Note 2).
  • Fast Switching.
  • Tight Parameter Distribution.
  • RoHS Compliant Typical.

📥 Download Datasheet

Full PDF Text Transcription for AFGHL50T65SQD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AFGHL50T65SQD. For precise diagrams, and layout, please refer to the original PDF.

Field Stop Trench IGBT 50 A, 650 V AFGHL50T65SQD Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQD which is AEC Q101 qualified offers th...

View more extracted text
d IGBT technology. AFGHL50T65SQD which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application. Features • AEC−Q101 Qualified • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.

More Datasheets from onsemi

Part Number Description
AFGHL50T65SQDC Hybrid IGBT
AFGHL50T65SQ IGBT
AFGHL50T65RQDN IGBT
AFGHL25T120RHD IGBT
AFGHL25T120RLD IGBT
AFGHL30T65RQDN IGBT
AFGHL40T120RHD IGBT
AFGHL40T65RQDN IGBT
AFGHL40T65SPD IGBT
AFGHL40T65SQ IGBT