• Part: AFGHL50T65SQD
  • Description: IGBT
  • Manufacturer: onsemi
  • Size: 334.82 KB
Download AFGHL50T65SQD Datasheet PDF
onsemi
AFGHL50T65SQD
AFGHL50T65SQD is IGBT manufactured by onsemi.
Field Stop Trench IGBT 50 A, 650 V Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQD which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application. Features - AEC- Q101 Qualified - Maximum Junction Temperature: TJ = 175°C - Positive Temperature Co- efficient for Easy Parallel Operating - High Current Capability - Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A - 100% of the Parts are Tested for ILM (Note 2) - Fast Switching - Tight Parameter Distribution - Ro HS pliant Typical Applications - Automotive HEV- EV Onboard Chargers - Automotive HEV- EV DC- DC Converters - Totem Pole Bridgeless PFC - PTC MAXIMUM RATINGS Rating Symbol Value Unit Collector- to- Emitter Voltage Gate- to- Emitter Voltage Transient Gate- to- Emitter Voltage VCES VGES ±20 ±30 Collector Current (Note 1) @ TC = 25°C @ TC = 100°C Pulsed Collector Current (Note...