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AFGHL50T65SQDC - Hybrid IGBT

Key Features

  • AEC.
  • Q101 Qualified.
  • Maximum Junction Temperature : TJ = 175C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @IC = 50 A.
  • Fast Switching.
  • Tighten Parameter Distribution.
  • No Reverse Recovery/No Forward Recovery Typical.

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Full PDF Text Transcription for AFGHL50T65SQDC (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AFGHL50T65SQDC. For precise diagrams, and layout, please refer to the original PDF.

Hybrid IGBT, 50 A, 650 V AFGHL50T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL50T65SQDC o...

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d the 1.5th generation SiC Schottky Diode technology, AFGHL50T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and Inverter. Features  AEC−Q101 Qualified  Maximum Junction Temperature : TJ = 175C  Positive Temperature Co−efficient for Easy Parallel Operating  High Current Capability  Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.

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