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AFGHL50T65RQDN - IGBT

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operation.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @ IC = 50 A.
  • 100% of the Parts Tested for ILM (Note 2).
  • High Input Impedance.
  • Fast Switching.
  • Tightened Parameter Distribution.
  • This Device is Pb.
  • Free and RoHS Compliant Typical.

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Full PDF Text Transcription for AFGHL50T65RQDN (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AFGHL50T65RQDN. For precise diagrams, and layout, please refer to the original PDF.

IGBT for Automotive Application 650 V, 50 A AFGHL50T65RQDN Using novel field stop IGBT technology, onsemi’s new series of field stop 4th generation IGBTs offer the optimu...

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nsemi’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.

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