AFGHL50T65RQDN Overview
IGBT for Automotive Application 650 V, 50 A AFGHL50T65RQDN Using novel field stop IGBT technology, onsemi’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, tele, ESS and PFC applications where low conduction and switching losses are essential.
AFGHL50T65RQDN Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co-efficient for Easy Parallel Operation
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A
- 100% of the Parts Tested for ILM (Note 2)
- High Input Impedance
- Fast Switching
- Tightened Parameter Distribution
- This Device is Pb-Free and RoHS pliant