AFGHL50T65RQDN
AFGHL50T65RQDN is IGBT manufactured by onsemi.
IGBT for Automotive Application
650 V, 50 A
Using novel field stop IGBT technology, onsemi’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, tele, ESS and PFC applications where low conduction and switching losses are essential.
Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co- efficient for Easy Parallel Operation
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A
- 100% of the Parts Tested for ILM (Note 2)
- High Input Impedance
- Fast Switching
- Tightened Parameter Distribution
- This Device is Pb- Free and Ro HS pliant
Typical Applications
- Solar Inverter, UPS, Welder, Tele, ESS, PFC
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector- to- Emitter Voltage
Gate- to- Emitter Voltage Transient Gate- to- Emitter Voltage
VCES VGES
±20
±30
Collector Current (Note 1) @ TC = 25°C @ TC = 100°C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
Diode Forward Current (Note 1) @ TC = 25°C @ TC = 100°C
Pulsed Diode Maximum Forward...
