ATP218 Datasheet | onsemi

Features - ON-resistance RDS(on)1=2.9mΩ(typ.) - 2.5V drive - Protection diode in - Input Capacitance Ciss=6600p F(typ.) - Halogen free pliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) - 1 Avalanche Current - 2 Note :- 1 VDD=15V, L=100μH, IAV=50A - 2 L≤100μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 30 ±10 100 300 60 150 --55 to +150 235 Unit V V A A W °C °C m J A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7057-001 1.5 0.4 ATP218-TL-H 4.6 2.6 Product & Package Information - Package : ATPAK - JEITA,...