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ATP218 - N-Channel Power MOSFET

ON Semiconductor

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Datasheet Details

Part number	ATP218
Manufacturer	ON Semiconductor ↗
File Size	261.86 KB
Description	N-Channel Power MOSFET
Datasheet	ATP218-ONSemiconductor.pdf

ATP218 Product details

Features

ON-resistance RDS(on)1=2.9mΩ(typ. ).
2.5V drive.
Protection diode in.
Input Capacitance Ciss=6600pF(typ. ).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 Avalanche Current.

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Published: Nov 6, 2015 |