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  ON Semiconductor Electronic Components Datasheet  

BD136 Datasheet

Plastic Medium Power Silicon PNP Transistor

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BD136, BD138, BD140
Plastic Medium Power
Silicon PNP Transistor
This series of plastic, medium−power silicon PNP transistors are
designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
Features
Pb−Free Packages are Available*
DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc
BD 136, 138, 140 are complementary with BD 135, 137, 139
http://onsemi.com
1.5 A POWER TRANSISTORS
PNP SILICON
45, 60, 80 V, 12.5 W
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−Emitter Voltage
BD136
BD138
BD140
VCEO
45
60
80
Vdc
Collector−Base Voltage
BD136
BD138
BD140
VCBO
45
60
100
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
IB
PD
5.0 Vdc
1.5 Adc
0.5 Adc
1.25 Watts
10 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 12.5 Watts
100 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to
+ 150
°C
Maximum ratings are those values beyond which device damage can oc-
cur. Maximum ratings applied to the device are individual stress limit values
(not normal operating conditions) and are not valid simultaneously. If these
limits are exceeded, device functional operation is not implied, damage
may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance,
Junction−to−Case
qJC 10 °C/W
Thermal Resistance,
Junction−to−Ambient
qJA 100 °C/W
321
TO−225AA
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
BD1xx
xx = 36, 38, 40
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
BD136
TO−225AA
500 Units/Box
BD136G
BD138
BD138G
BD140
BD140G
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
500 Units/Box
500 Units/Box
500 Units/Box
500 Units/Box
500 Units/Box
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
April, 2005 − Rev. 12
1
Publication Order Number:
BD136/D


  ON Semiconductor Electronic Components Datasheet  

BD136 Datasheet

Plastic Medium Power Silicon PNP Transistor

No Preview Available !

BD136, BD138, BD140
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Collector−Emitter Sustaining Voltage*
(IC = 0.03 Adc, IB = 0)
BVCEO
Type
BD 136
BD 138
BD 140
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TC = 125 _C)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
DC Current Gain
(IC = 0.005 A, VCE = 2 V)
(IC = 0.15 A, VCE = 2 V)
(IC = 0.5 A, VCE = 2 V)
Collector−Emitter Saturation Voltage*
(IC = 0.5 Adc, IB = 0.05 Adc)
Base−Emitter On Voltage*
(IC = 0.5 Adc, VCE = 2.0 Vdc)
*Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%.
ICBO
IEBO
hFE*
VCE(sat)*
VBE(on)*
Min
45
60
80
25
40
25
Max Unit
Vdc
mAdc
0.1
10
10 mAdc
250
0.5 Vdc
1 Vdc
10
5.0
2.0 5 ms
1.0
0.5 TJ = 125°C
0.5 ms
dc
0.1 ms
0.2
0.1
0.05
0.02
0.01
1
BD136
BD138
BD140
2
5 10 20
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
80
Figure 1. Active−Region Safe Operating Area
http://onsemi.com
2


Part Number BD136
Description Plastic Medium Power Silicon PNP Transistor
Maker ON Semiconductor
Total Page 4 Pages
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