BS170 Datasheet - ON Semiconductor

N-channel MOSFET

BS170 Features

* High Density Cell Design for Low RDS(ON)

* Voltage Controlled Small Signal Switch

* Rugged and Reliable

* High Saturation Current Capability

* These are Pb

* Free Devices DATA SHEET www.onsemi.com BS170 DGS TO

* 92 3 4.825x4.76 CASE 135AN D GS T

BS170 General Description

These N *Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on *state resistance while provide rugged, reliable, and fast switching performance. They can be used in.

BS170 Datasheet (880.96 KB)